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| TXDV 412 ---> 812 ALTERNISTORS .VERY .I .dV/ FEATURES HIGH COMMUTATION : > 42.5 A/ms (400Hz) NSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dt : 500 V/s min DESCRIPTION The TXDV 412 ---> 812 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) Parameter A1 A2 G TO220AB (Plastic) Value Tc = 90 C 12 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 170 125 120 72 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case C C C Symbol Parameter 412 Repetitive peak off-state voltage Tj = 125 C 400 TXDV 612 600 812 800 Unit VDRM VRRM March 1995 V 1/5 TXDV 412 ---> 812 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 2.5 1.9 Unit C/W C/W C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V Test Conditions (DC) RL=33 (DC) RL=33 Tj=25C Tj=25C Tj=110C Tj=25C Tj=25C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 17A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/s (dV/dt)c = 10V/s * For either polarity of electrode A2 voltage with reference to electrode A1. Value MAX MAX MIN TYP TYP 100 1.5 0.2 2.5 100 200 MAX MAX MAX MAX MIN 100 1.95 0.01 2 500 Unit mA V V s mA VD=VDRM RL=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT Tj=25C Tj=25C Tj=25C Tj=110C Tj=110C mA V mA V/s (dI/dt)c * Tj=110C MIN 10 42.5 A/ms 2/5 TXDV 412 ---> 812 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 = 30 = 90 = 60 o o Tcase (oC) Rth = 0 o C/W o 1 C/W o 2 C/W 4 o C/W 20 = 180 = 120 o o o 18 16 14 12 10 8 6 4 -90 -95 -100 -105 -110 -115 I T(RMS) (A) 9 10 11 12 2 0 0 Tamb ( C) o -120 60 80 100 120 -125 140 20 40 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 I (A) T(RMS) 14 12 Zth(j-c) 10 8 6 4 2 0 0 o o 0.1 = 180 Zth(j-a) Tcase( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 375 TXDV 412 ---> 812 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. 4/5 376 TXDV 412 ---> 812 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I J H D B F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 377 |
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